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参数资料
| 型号： | S8701 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 116K |
| 代理商： | S8701 |
Si PIN photodiode
S8359, S8751
2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200
5 Hamamatsu Photonics K.K.
Cat. No. KPIN1063E0
2
J
an. 2005 DN
2
s Dimensional outline (unit: mm)
s Spectral response
KPINB0266EA
KPINA0089EA
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
200
400
600
800
1000
1200
0.1
0.2
0.3
0.4
0.5
0.6
0.7
(Typ. Ta=25 C)
QE=100 %
S8359
S8701
s Dark current vs. reverse voltage
KPINB0267EA
s Cut-off frequency vs. reverse voltage
KPINB0268EA
REVERSE VOLTAGE (V)
DARK
CURRENT
100 fA
100 pA
10 pA
1 pA
1
0.1
0.01
10
100
S8359
S8701
(Typ. Ta=25 C)
REVERSE VOLTAGE (V)
CUT-OFF
FREQUENCY
(MHz)
10
1000
100
110
(Typ. Ta=25 C,
λ=780 nm, RL=50 )
S8701
S8359
s Terminal capacitance vs. reverse voltage
KPINB0269EA
s Directivity
KPINB0270EA
4.3 ± 0.3
(INCLUDING BURR)
4.15
3.0
2.4
R 0.9
0.45
0.6
10
°
5
°
10
°
5
°
0.45
2.54 ± 0.5
(SPECIFIED AT THE LEAD ROOT)
0.6 ± 0.3
(0.8)
(1.2)
1.43
4.43
15
MIN.
1.4
Shaded area indicates burr.
Tolerance unless otherwise
noted: ±0.2, ±2
Values in parentheses indicate
reference value.
1.7
(INCLUDING
BURR)
4.6
+0.6 -0
.3
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
100 fF
100 pF
10 pF
1 pF
1
0.1
10
100
S8359
S8701
(Typ. Ta=25 C)
RELATIVE RADIANT OUTPUT (%)
(Typ. Ta=25 C)
80
%
40
%
60
%
20
%
20
10
0
10
20
90
80
50
40
30
70
60
90
80
50
40
30
70
60
100
%
S8701
S8359
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