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| 型号： | S8753 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | 4 X 4.80 MM, 1.80 MM HEIGHT, PLASTIC, SIP-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 116K |
| 代理商： | S8753 |
Si photodiode
S8753
2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Cat. No. KSPD1057E02
Apr. 2006 DN
2
s Dimensional outline (unit: mm)
s Spectral response
KSPDB0211EB
KSPDA0151EA
KSPDB0212EA
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
200
400
600
800
1000
1200
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
QE=100 %
PHOTODIODE a
PHOTODIODE b
(Typ. Ta=25 C)
s Dark current vs. reverse voltage
REVERSE VOLTAGE (V)
DARK
CURRENT
100 fA
100 pA
10 pA
1 pA
1
0.1
0.01
10
100
(Typ. Ta=25 C, all elements)
s Terminal capacitance vs. reverse voltage
KSPDB0213EA
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
1 pF
1 nF
100 pF
10 pF
1
0.1
10
100
PHOTODIODE a
PHOTODIODE b
(Typ. Ta=25 C)
4.7 *
1.8
(2
×
)10
(2
×
)5
4.2
±
0.2
(INCLUDING
BURR)
0.4
0.5
(1.25)
(0.8)
4.9
±
0.25
4.0
*
5.0 MAX.
(INCLUDING BURR)
(3 ×) 0.5
1.27 1.27
(3 ×) 0.4
0.8
0.25
2.0
DEPTH 0.15 MAX.
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
(1.3 × 1.3)
2.1
(2 ×) 10
4.7 *
4.8 *
5.0 MAX.
(INCLUDING BURR)
(2 ×) 5
Photodiode a: visible to infrared range
Photodiode b: visible cut
Tolerance unless otherwise
noted: ±0.1, ±2
Shaded area indicates burr.
Chip position accuracy with respect
to the package dimensions marked *
X
≤±0.2, Y≤±0.2, θ≤±2
ANODE a
CATHODE COMMON
ANODE b
ab
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