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参数资料
| 型号： | S8785-02 |
| 元件分类： | 光电元器件 |
| 英文描述： | LINEAR OUTPUT PHOTO DETECTOR |
| 封装： | HERMETIC SEALED PACKAGE-12 |
| 文件页数： | 1/4页 |
| 文件大小： | 184K |
| 代理商： | S8785-02 |
S8785 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp,
TE-cooler and feedback resistor (10 G
) are integrated into a single package. A thermistor is also included in the same package for temperature
control so that the photodiode and I-V conversion circuit can be cooled for stable operation. S8785 series also features low noise and low NEP,
and is especially suitable for NOx detection.
Features
l Large active area size
S8785/-01: 10 × 10 mm
S8785-02 :
φ15.6 mm (lens)
l UV to NIR Si photodiode optimized for precision photometry
l Compact hermetic package with sapphire window
l High precision FET input operational amplifier
l High gain: Rf=10 G
l Low noise and NEP
l High cooling efficiency
S8785/-02:
T=50 C
S8785-01 :
T=30 C
l High stability with thermistor
Applications
l NOx detection
l Low-light-level measurement
PHOTODIODE
Si photodiode with preamp
Large area photodiode integrated with op amp and TE-cooler
S8785 series
S8785 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
I Absolute maximum ratings
I Recommended operating conditions
Parameter
Symbol
Value
Parameter
Symbol S8785/-01
S8785-02
Supply voltage (preamp)
Vcc
±20 V
Supply voltage (preamp)
Vcc
±5 to ±15 V
Reverse voltage (S8785-02, photodiode)
VR
30 V
Reverse voltage (photodiode)
VR
0 V
15 V
Operating temperature
Topr
-30 to +60 °C
TE-cooler current
Ite
0.8 A Max.
Storage temperature
Tstg
-40 to +80 °C
Thermistor power dissipation
Pth
0.03 mW Max.
Operating temperature (photodiode)
Tdopr -30 to +60 °C
Load resistance
RL
100 kW Min.
TE-cooler allowable voltage *1
Vte
5 V *2
TE-cooler allowable current
Ite
1 A
Thermistor power dissipation
Pth
0.2 mW
*1: Max ripple: 10 %
*2: S8785-01: 3.7 V
I Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 M9)
S8785
S8785-01
S8785-02
Parameter
Symbol
Condition
T= -25 °C
VR=0 V
T= -5 °C
VR=0 V
T= -25 °C
VR=15 V
Unit
Spectral response range
l
190 to 1100
320 to 1100
nm
Peak sensitivity wavelength
lp
960
nm
Feedback resistance
Rf
10
GW
l=200 nm
-0.9
-
Photo sensitivity
S
l=lp
-5.1
-6.5
V/nW
Output noise voltage
Vn
Dark state, f=10 Hz
20
25
12
Vrms/Hz1/2
Noise equivalent power
NEP
l=lp, f=10 Hz
4
5
2
fW/Hz1/2
Output offset voltage
Vos
Dark state
±2
±3
mV
Cut-off frequency
fc
-3 dB
190
180
170
Hz
Output voltage swing
Vo
-13
V
Supply current
Icc
Dark state
0.3
mA
Thermistor resistance
Rth
86
30
86
kW
1
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