参数资料
型号: S9011-TO-92
厂商: 江苏长电科技股份有限公司
英文描述: TRANSISTOR( NPN )
中文描述: 晶体管(NPN)的
文件页数: 1/2页
文件大小: 114K
代理商: S9011-TO-92
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9011
TRANSISTOR
NPN
FEATURE
Power dissipation
P
CM
: 0.31 W
Collector current
I
CM:
0.03 A
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and storage junction temperature range
Tj, T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A
I
E
=0
30
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 0.1 mA , I
B
=0
20
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A
I
C
=0
4
V
Collector cut-off current
I
CBO
V
CB
=16V , I
E
=0
0.1
A
Collector cut-off current
I
CBO
V
CB
=16V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3.5V, I
C
=0
0.1
A
DC current gain
h
FE(1)
V
CE
=5V, I
C
=1mA
28
270
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 1mA
0.3
V
Base-emitter voltage
V
BE(sat)
I
C
= 10 mA, I
B
= 1mA
1
V
Transition frequency
f
T
V
CE
=5V,I
C
=1mA,
f=30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
D
E
F
G
H
I
J
Range
28-45
39-60
54-80
72-108
97-146
132-198
180-270
TO
1
2
3
92
1.EMITTER
2. COLLECTOR
3. BASE
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