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参数资料
| 型号： | S9269 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | 10.10 X 8.90 MM, 40 MM HEIGHT, CERAMIC PACKAGE-4 |
| 文件页数： | 1/3页 |
| 文件大小： | 113K |
| 代理商： | S9269 |
PHOTODIODE
Si photodiode with preamp
Photodiode and preamp integrated with feedback resistance and capacitance
S9269, S9270
S9269 and S9270 are low-noise photosensors consisting of a Si photodiode, op amp, and feedback resistance and capacitance, all
integrated into a ceramic package with a surface size equal to our standard ceramic packages. These photosensors are ideal for a wide
range of photometric applications including analytical equipment and measurement equipment. The active area of the photodiode is
internally connected to the GND terminal making it highly resistant to EMC noise. Combinations with various photodiodes such as UV
sensitivity enhanced type, IR sensitivity suppressed type and IR sensitivity enhanced type are also available. (Custom order products)
Features
Applications
l Si photodiode for visible to near IR Si precision photometry
l Small package
S9269: 10.1 × 8.9 × 40 t mm
S9270: 16.5 × 15.0 × 4.15 t mm
l Active area
S9269: 5.8 × 5.8 mm
S9270: 10 × 10 mm
l FET input operational amplifier with low power dissipation
l Built-in Rf=1 G, Cf=5 pF
l Low noise and NEP
l Precision photometry
l General-purpose optical measurement
1
s Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Value
Unit
Supply voltage (op amp)
Vcc
±20
V
Power dissipation
P
500
mW
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-20 to +80
°C
s Electrical and optical characteristics (Ta=25
°C, Vcc=±15 V, RL=1 M)
S9269
S9270
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
320 to
1100
--
320 to
1100
-nm
Peak sensitivity wavelength
λp
-
960
-
960
-
nm
F e e d bac k resistanc e (built-in) *
Rf
-
1
-
1
-
G
F e e d back cap acitance (built-in) *
Cf
-
5
-
5
-
pF
Photo sensitivity
S
λ=λp
0.5
0.62
-
0.5
0.62
-
V/nW
Dark state, f=10 Hz
-
7.3
-
9.7
-
Output noise voltage
Vn
Dark state, f=20 Hz
-
6.5
-
9.1
-
Vrms/Hz
1/2
λ=λp, f=10 Hz
-
12
-
16
-
Noise equivalent power
NEP
λ=λp, f=20 Hz
-
12
-
17
-
fW/Hz
1/2
Output offset voltage
Vos
Dark state
-
±4
-
±4
-
mV
Cut-off frequency
fc
-3 dB
-
32
-
32
-
Hz
Output voltage swing
Vo
RL=10 k
-
13
-
13
-
V
Supply current
Icc
Dark state
-
0.3
0.6
-
0.3
0.6
mA
* Custom devices available with different Rf, Cf, etc.
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