参数资料
型号: S9295
元件分类: 光敏二极管
英文描述: PHOTO DIODE
封装: HERMETIC SEALED PACKAGE-12
文件页数: 1/4页
文件大小: 123K
代理商: S9295
S9295 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp,
TE-cooler and feedback resistor (10 G
) are integrated into a single package. A thermistor is also included in the same package for temperature
control so that the photodiode and I-V conversion circuit can be cooled for stable operation. S9295 series also features low noise and low NEP,
and is especially suitable for NOx detection. The active area of the photodiode is internally connected to the GND terminal making it highly
resistant to EMC noise.
Features
l Large active area: 10 × 10 mm
l UV to NIR Si photodiode optimized for precision photometry
l Compact hermetic package with sapphire window
l High precision FET input operational amplifier
l High gain: Rf=10 G
l Low noise and NEP
l High cooling efficiency
S9295
:
T=50 C
S9295-01:
T=30 C
l High stability with thermistor
l Highly resistant to EMC noise
Applications
l NOx detection
l Low-light-level measurement, etc.
PHOTODIODE
Si photodiode with preamp
Large area photodiode integrated with op amp and TE-cooler
S9295 series
S9295 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
s Absolute maximum ratings
s Recommended operating conditions
Parameter
Symbol
Value
Parameter
Symbol
Value
Supply voltage (preamp)
Vcc
±20 V
Supply voltage (preamp)
Vcc
±5 to ±15 V
Operating temperature
Topr
-30 to +60
°C
TE-cooler current
Ite
0.8 A Max.
Storage temperature
Tstg
-40 to +80
°C
Thermistor power dissipation
Pth
0.03 mW Max.
TE-cooler allowable voltage *
1
Vte
5 V *
2
Load resistance
RL
100 k
Min.
TE-cooler allowable current
Ite
1 A
Thermistor power dissipation
Pth
0.2 mW
*1: Ripple Max.: 10 %
*2: S9295-01: 3.7 V
s Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 M
)
S9295
S9295-01
Parameter
Symbol
Condition
T= -25
°C
T= -5
°C
Unit
Spectral response range
λ
190 to 1100
nm
Peak sensitivity wavelength
λp
960
nm
Feedback resistance (built-in) *
3
Rf
10
G
λ=200 nm
0.9
Photo sensitivity
S
λ=λp
5.1
V/nW
Output noise voltage
Vn
D ark state, f= 10 H z
20
25
Vrms/Hz
1/2
Noise equivalent power
NEP
λ=λp, f=10 Hz
4
5
fW/Hz
1/2
Output offset voltage
Vos
Dark state
±2
mV
Cut-off frequency
fc
-3 dB
190
180
Hz
Output voltage swing
Vo
13
V
Supply current
Icc
Dark state
0.3
mA
Thermistor resistance
Rth
86
30
k
*3: Custom devices are available with different Rf values and/or internal Cf, etc.
1
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