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参数资料
| 型号： | S9345 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 封装： | 3.40 X 7 MM, 0.95 MM HEIGHT, MINIATURE, PLASTIC PACKAGE-6 |
| 文件页数： | 2/2页 |
| 文件大小： | 98K |
| 代理商： | S9345 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2004 Hamamatsu Photonics K.K.
Cat. No. KPIN1069E01
Dec. 2004 DN
Si PIN photodiode
S9345
2
1.3
7.2
±
0.2
7.0
*
6.4
2.54
3.4 *
0.3
4.0 ± 0.2
3.4 *
2.8
7.0
*
7.2
±
0.2
0.05
0.45
0.75
0.95
0.15
0.05
2.54
0.5
0.2
a
b
a
b
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
1.5
ACTIVE AREA
1.5
0.02
4.1
Tolerance unless otherwise noted: ±0.1, ±2
Chip position accuracy with respect to the
package dimensions marked *.
X, Y
≤±0.2, θ≤±2
Electrodes
Part of the lead frame on the bottom of the
package might not be covered with epoxy resin.
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK
CURRENT
0.01
0.1
1
10
1 pA
10 pA
100 pA
1 nA
100 nA
10 nA
100
KPINB0293EA
s Dimensional outline (unit: mm)
s Spectral response
KPINA0095EA
KPINB0294EA
s Photo sensitivity temperature characteristic
WAVELENGTH (nm)
(Typ.)
TEMPERATURE
COEFFICIENT
(%/
C)
400
500
600
700
800
900
1000
-0.2
0
0.2
1.4
0.8
1.0
1.2
0.6
0.4
1100
KPINB0295EA
s Dark current vs. reverse voltage
KPINB0296EA
REVERSE VOLTAGE (V)
(Typ. Ta=25 C, f=1 MHz)
TERMINAL
CAPACITANCE
0.1
1
10
100 fF
1 pF
10 pF
100 pF
1 nF
100
PHOTODIODE b
PHOTODIODE a
s Terminal capacitance vs. reverse voltage
WAVELENGTH (nm)
(Typ. Ta=25 C)
PHOTO
SENSITIVITY
(A/W)
400
200
0
0.1
0.2
0.8
0.5
0.6
0.7
0.4
0.3
600
800
1000
1200
QE=100 %
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