
Photo IC diode
S9648
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2007 Hamamatsu Photonics K.K.
Cat. No. KPIC1057E02
Jan. 2007 DN
ILLUMINANCE (lx)
(Typ. Ta=25 C, VR=5 V, 2856 K)
PHOTO
CURRENT
0.1
1
10
100 nA
1 A
10 mA
1 mA
100 A
10 A
100
1000
0.1
1
10
100
0.01
100
10 k
1 k
100 k
LOAD RESISTANCE (
)
1 M
RISE/FALL
TIMES
(ms)
(Typ. Ta=25 C, VR=7.5 V,
λ=560 nm, Vo=2.5 V)
tr
tf
2
KPICB0085EA
s Spectral response
0.1
0.2
0.3
0.4
0.5
0.7
0.9
0.6
0.8
1.0
0
200
400
600
800
WAVELENGTH (nm)
1000
1200
RELATIVE
SENSITIVITY
(Typ. Ta=25 C, VR=5 V)
KPICB0077EA
s Rise/fall times vs. load resistance
s Operating circuit example
KPICC0091EB
PHOTODIODE
FOR SIGNAL OFFSET
CATHODE
ANODE
CL
RL
Vout
REVERSE BIAS
POWER SUPPLY
THE DRAWING SURROUNDED
BY THE DOTTED LINE SHOWS
A SCHEMATIC DIAGRAM OF
THE PHOTO IC.
CURRENT AMP
(APPROX. 13000 times)
PHOTODIODE
FOR SIGNAL DETECTION
INTERNAL PROTECTION
RESISTANCE
(APPROX. 150
9)
s Linearity
KPICB0086EA
The photo IC diode must be reverse-biased so that a positive potential
is applied to the cathode.
To eliminate high-frequency components, we recommend placing a
load capacitance CL in parallel with load resistance RL as a low-pass
filter.
2
πCLRL
1
Cut-off frequency fc
ANODE
CATHODE
Fillet
Tie-bar cut point (including burr, no plating)
5.0
±
0.2
0.75
±
0.25
1.5
MAX.
(4.3)
25.4
MIN.
3.5
±
0.3
(1.0)
1.0
MIN.
2.54 ± 0.5
(SPECIFIED AT THE LEAD ROOT)
(2 ×) 1.0 MAX.
CENTER OF ACTIVE AREA
ACTIVE AREA 0.64 × 0.52
(2 ×)
o0.5
Sn PLATED LEADS
s Dimensional outline (unit: mm)
KPICA0057EA