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| 型号： | S9674 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | LEAD FREE, LEADLESS, THIN, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 62K |
| 代理商： | S9674 |
Si photodiode
S9674
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2010 Hamamatsu Photonics K.K.
Cat. No. KSPD1070E02
Nov. 2010 DN
2
5.7
4.6
(4.1)
3.1
(0.55)
0.85
1.4 ± 0.2
4.0
2.5
0.8
ACTIVE AREA
(2 × 2)
CATHODE INDEX
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
(2 ×) R0.3
RECOMMENDED
LAND PATTERN
Tolerance unless otherwise
noted: ±0.15, ±2
(6.5)
(3.2)
(2.8)
3.3
1.05
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
0.1
1
10
10 pF
100 pF
1 nF
10 nF
100
(Typ. Ta=25 C)
s Dimensional outline (unit: mm)
s Spectral response
WAVELENGTH (nm)
(Typ. Ta=25 C)
PHOTO
SENSITIVITY
(A/W)
600
200
800
400
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1000
1200
QE=100 %
KSPDB0248EA
s Dark current vs. reverse voltage
REVERSE VOLTAGE (V)
DARK
CURRENT
0.01
0.1
1
10
100 fA
1 pA
10 pA
10 nA
1 nA
100 pA
100
(Typ. Ta=25 C)
s Terminal capacitance vs. reverse voltage
KSPDB0251EA
s Directivity
RELATIVE SENSITIVITY (%)
100
0
20
40
60
80
20
90
80
70
60
50
40
30
20
10
0
10
20
30
40
50
60
70
80
40
60
80
100
(Typ. Ta=25 C, light source: tungsten lamp)
KSPDB0249EA
KSPDB0250EA
KSPDA0179EB
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