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参数资料
| 型号： | S9717-05L |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | CERAMIC PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 123K |
| 代理商： | S9717-05L |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Cat. No. KAPD1014E02
Mar. 2006 DN
Si APD
S9717 series
2
s Spectral response
KAPDB0020EB
s Dark current vs. reverse voltage
KAPDB0101EA
s Dimensional outlines (uint: mm)
KAPDA0032EA
s Gain vs. reverse voltage
KAPDB0017EC
REVERSE VOLTAGE (V)
DARK
CURRENT
0
50
100
150
200
1 pA
100 pA
1 nA
(Typ. Ta
=25 C)
10 pA
S9717-05K/-05L
S9717-02K
S9717-02K/-05K
S9717-05L
KAPDA0033EA
3.5 ± 0.2
(3 ×) 0.8
(1.25)
(2
×
)0.95
1.08
0.6
1.33
1.27
1.4
3.3
2.54
4.0
±
0.2
(6 ×) R0.15
ACTIVE AREA
ANODE
CATHODE
GND
3.5 ± 0.2
(3 ×) 0.8
(1.25)
(2
×
)0.95
1.1
0.6
1.3
0.4
1.27
0.8
3.3
2.54
4.0
±
0.2
(6 ×) R0.15
LENS
ANODE
CATHODE
GND
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
(Typ. Ta=25 C,
λ=800 nm)
200
400
600
800
1000
40
20
0
50
30
10
M=100
M=50
80
120
100
140
160
180
1
10
100
1000
10000
REVERSE VOLTAGE (V)
GAIN
(Typ.
λ=800 nm)
-20 C
0 C
20 C
40 C
60 C
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