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| 型号： | S9S08SC4E0MTG |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | MICROCONTROLLER, PDSO16 |
| 封装： | 0.65 MM PITCH, ROHS COMPLIANT, TSSOP-16 |
| 文件页数： | 16/31页 |
| 文件大小： | 765K |
| 代理商： | S9S08SC4E0MTG |
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Chapter 3 Electrical Characteristics
MC9S08SC4 MCU Series Data Sheet, Rev. 4
Freescale Semiconductor
23
3.12
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory section.
Table 3-14. FLASH Characteristics
Num
C
Characteristic
Symbol
Min
Typical
Max
Unit
1
—
Supply voltage for program/erase
Vprog/erase
4.5
—
5.5
V
2
—
Supply voltage for read operation
VRead
4.5
—
5.5
V
3
—
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
4
—
Internal FCLK period (1/fFCLK)tFcyc
5
—
6.67
μs
5
—
Byte program time (random location)2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
tprog
9tFcyc
6
—
Byte program time (burst mode)2
tBurst
4tFcyc
7
—
Page erase time2
tPage
4000
tFcyc
8
—
Mass erase time2
tMass
20,000
tFcyc
9C
Program/erase endurance3
TL to TH = –40°C to +125°C
T = 25
°C
3 Typical endurance for FLASH is based on the intrinsic bit cell performance. For additional information on how Freescale
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
nFLPE
10,000
—
100,000
—
cycles
10
C
Data retention4
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
ipg_clk
tCYC
EXTERNAL
CLOCK
INPUT
CAPTURE
tTEXT
tTCLKH
tTCLKL
tICPW
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S9S08SC4E0MTGR | 功能描述:8位微控制器 -MCU 8BIT 4K FL 256 RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| S9S08SG16E1CTG | 功能描述:8位微控制器 -MCU S08 16K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| S9S08SG16E1CTGR | 制造商:Freescale Semiconductor 功能描述:Microcontroller 制造商:Freescale Semiconductor 功能描述:S08 16K FLASH - Tape and Reel 制造商:Freescale Semiconductor 功能描述:8-bit Microcontrollers - MCU S08 16K FLASH |
| S9S08SG16E1CTJ | 功能描述:8位微控制器 -MCU S08 16K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| S9S08SG16E1CTJR | 功能描述:8位微控制器 -MCU S08 16K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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