参数资料
型号: SA160CARL
厂商: ON SEMICONDUCTOR
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封装: PLASTIC, CASE 59-09, 2 PIN
文件页数: 3/4页
文件大小: 48K
代理商: SA160CARL
SA5.0CA Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
VRWM
Breakdown Voltage
VC @ IPP (Note 7)
Device
VRWM
(Note 5)
IR @ VRWM
VBR (Note 6) (Volts)
@ IT
VC
IPP
QVBR
Device
Marking
(Volts)
(
A)
Min
Nom
Max
(mA)
(Volts)
(A)
(mV/
°C)
SA64CA
64
1
71.1
74.85
78.6
1
103
4.9
76
SA70CA
70
1
77.8
81.9
86
1
113
4.4
85
SA78CA
78
1
86.7
91.25
95.8
1
126
4.0
95
SA85CA
85
1
94.4
99.2
104
1
137
3.6
103
SA90CA
90
1
100
105.5
111
1
146
3.4
110
SA100CA
100
1
111
117
123
1
162
3.1
123
SA110CA
110
1
122
128.5
135
1
177
2.8
133
SA120CA
120
1
133
140
147
1
193
2.5
146
SA130CA
130
1
144
151.5
159
1
209
2.4
158
SA150CA
150
1
167
176
185
1
243
2.1
184
SA160CA
160
1
178
187.5
197
1
259
1.9
196
SA170CA
170
1
189
199
209
1
275
1.8
208
NOTES:
5. MiniMOSORB
t transient suppressors are normally selected according to the maximum working peak reverse voltage (VRWM), which should
be equal to or greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C.
7. Surge current waveform per Figure 3 and derate per Figures 1 and 2.
100
10
1
0.1
0.1 ms
1 ms
10 ms
100 ms
1ms
10ms
P
,PEAK
POWER
(kW)
tp, PULSE WIDTH
Figure 1. Pulse Rating Curve
NONREPETITIVE PULSE
WAVEFORM SHOWN IN
FIGURE 3
100
80
60
40
20
0
25
50
75
100
125
150
175
200
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T A
=
25
C
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Pulse Derating Curve
100
50
0
01
2
3
4
t, TIME (ms)
V
ALUE
(%)
PULSE WIDTH (tp) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IPP.
PEAK VALUE - IPP
HALF VALUE -
IPP
2
Figure 3. Pulse Waveform
5
4
3
2
1
0
0 25
50
75 100 125 150 175
200
P
D
,STEADY
ST
A
TE
POWER
DISSIP
A
TION
(W
A
TTS)
TL, LEAD TEMPERATURE (°C)
3/8″
Figure 4. Steady State Power Derating
tr ≤ 10 s
tP
K
°
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