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参数资料
| 型号： | SA2B-E3/5AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 82K |
| 代理商： | SA2B-E3/5AT |
Document Number: 88969
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 13-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Surface Mount Glass Passivated Rectifier
SA2B thru SA2M
Vishay General Semiconductor
New Product
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
100 V to 1000 V
IFSM
55 A
IR
3.0 μA
VF at IF = 2.0 A
0.854 V
TJ max.
150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SA2B
SA2D
SA2G
SA2J
SA2K
SA2M
UNIT
Device marking code
2B
2D
2G
2J
2K
2M
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
800
1000
V
Average forward current
IF(AV)
2.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
55
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage
IF = 1.0 A
TJ = 25 °C
VF (1)
0.911
-
V
IF = 2.0 A
0.954
1.1
IF = 1.0 A
TJ = 125 °C
0.805
-
IF = 2.0 A
0.854
0.95
Reverse current
Rated VR
TJ = 25 °C
IR (2)
0.19
3
μA
TJ = 125 °C
28
90
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.5
-
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
11
-
pF
相关PDF资料 |
PDF描述 |
|---|---|
| SA2B-E3/61T | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SA2D-E3/5AT | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SA30A | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| SA160 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| SA26CA | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
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