参数资料
型号: SA2B-E3/61T
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC
封装: ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件页数: 3/4页
文件大小: 82K
代理商: SA2B-E3/61T
Document Number: 88969
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 13-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
SA2B thru SA2M
Vishay General Semiconductor
New Product
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
1000
100
10
20
30
40
50
60
70
80
90
100
1
0.1
0.01
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e
Curr
ent
(μA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
100
10
1
0.1
Reverse Voltage (V)
Junction
Capacit
ance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
100
10
1
0.1
10
1
0.01
1000
100
t - Pulse Duration (s)
Junction to Ambient
Tr
a
n
s
ient
Thermal
Impedance
(°C/W)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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