参数资料
型号: SA2D-E3/5AT
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 73K
描述: DIODE GPP 2A 200V SMA
标准包装: 7,500
二极管类型: 标准
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 2A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 2A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 1.5µs
电流 - 在 Vr 时反向漏电: 3µA @ 200V
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 带卷 (TR)
\? sA2B-E3, SA2D-E3, SA2G-E3, SA2J-E3, SA2K-E3, SA2M-E3“’y wwwvenayeomVishay General Semiconductor
THERMAL cHARAcTERIsTIcs (TA = 25 00 unless otherwise noted)
PARAMETER
Typical thermal resistance
N ate(i) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas
PREFERRED P/N
DELIVERY MODE
SAZJ-E3/61 T
7" diameter plastic tape and reel
SA2\J - E3/SAT
13" diameter plastic tape and reel
Resistive or Inductive Load
11‘ Lead Temperature
Ambient Temperature
F.C.E!. Mounted onD 79" x 0.79" (2u mm X 2o mm)Copper Pad Areas
Average Fonlvard Rectilied Current (A)
0 25 50 75 TDD 125 150 175
Lead Temperature (°C)
Fig. 1 - Max. Forward Current Derating Curve
Average Power Loss (W)
0 0.5 1.0 i.5 2.0 2.5
Average Fonlilard Current (A)
Fig. 2 — Fonivard Power Loss Characteristics
Revision: 14-Aug-13
a.3 rns Single Hair sinewave
Peak F0nNard surge Current (A)
I0Number of Cycles at 50 Hz
Fig. 3 - Max. Non-Repetitive Peak FonNard Surge Current
i0
instantaneous Forward current (A)
Instantaneous Forward Voltage M
Fig. 4 - Typical Instantaneous Forward Characteristics
2 Document Number: 88969For technical questions within your region: DicdesAmericas@vishay.com, DiodesAsia@vishay.Com, DiodesEurope@vishay.Com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshav.com/ooc?91000
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