参数资料
型号: SA2K-E3/5AT
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 73K
描述: DIODE GPP 2A 800V SMA
标准包装: 7,500
二极管类型: 标准
电压 - (Vr)(最大): 800V
电流 - 平均整流 (Io): 2A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 2A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 1.5µs
电流 - 在 Vr 时反向漏电: 3µA @ 800V
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 带卷 (TR)
‘lllvVISHAYQVsA2B-E3, sA2D-E3, sA2G-E3, sA2J-E3, SA2K-E3, sA2M-E3www.vishay.comVishay General Semiconductor
Junction Capacitance (pF) instantaneous Reverse Current (HA)
1000
T00
3
Percent OI Rated Peak Reverse Voitage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
Transient Thermal impedance (“C/W)
t- Pulse Duration (s)
Fig. 7 - Typical Transient Thermal Impedance
PACKAGE ouTLINE DIMENSIONS in inches (millimeters)
Do_214Ac (sMA)
Cathode Band
Mounting Pad Layout
0.074 (I .80)
T 0,0(:;3‘r(\‘i> BB) ,‘ “i MAX-
0065 (T 65 0.110 (2.79)0.049 (I 25 0.100 (2.54) 0
l 0.177‘(4.50) l f
0.157 (3.90) 0 mg (0 305] M60 U 52)
+ j MIN. ‘0 006 (0 152)
0.200 (5 20)
0.000 (2.20) REF0.070 (1.00)
0 060 (1.52) +0 030 (0.76) 0 000 (0.203)0 (0I
0.200 (5 20)0.I94 (4 03)
3 Document Number: 88969For technical questions within your region: DiodesArnericas@vishay.c0m, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 14?Aug-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.com/doc?91000
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