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参数资料
型号： SA30A-E3/54
厂商： VISHAY SEMICONDUCTORS
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
封装： ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN
文件页数： 1/7页
文件大小： 103K
代理商： SA30A-E3/54
SA5.0 thru SA170CA
Vishay General Semiconductor
Document Number: 88378
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
Available in uni-directional and bi-directional
500 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty
cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients
induced
by
inductive
load
switching
and lighting on ICs, MOSFET, signal lines of sensor
units
for
consumer,
computer,
industrial
and
telecommunication.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
DEVICES FOR BI-DIRECTION APPLICATIONS
For
bi-directional
types,
use
C
or
CA
suffix
(e.g. SA5.0C, SA170CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VWM
5.0 V to 170 V
PPPM
500 W
PD
3.0 W
IFSM (uni-directional only)
70 A
TJ max.
175 °C
DO-204AC (DO-15)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1) (Fig. 1)
PPPM
500
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See next table
A
Power dissipation on infinite heatsink at TA = 75 °C (Fig. 5)
PD
3.0
W
Peak forward surge current, 10 ms single half sine-wave uni-directional only
IFSM
70
A
Maximum instantaneous forward voltage at 35 A for uni-directional only (2)
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相关PDF资料
PDF描述
SA30CA-E3/54 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SA36-E3/54 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SA45C-E3/54 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SA48-E3/54 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SA5.0-E3/54 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
相关代理商/技术参数
参数描述
SA30AG 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
SA30AHE3/54 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 30V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SA30AHE3/73 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 30V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SA30ARL 功能描述:TVS 二极管 - 瞬态电压抑制器 30V 500W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SA30ARLG 功能描述:TVS 二极管 - 瞬态电压抑制器 30V 500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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