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参数资料
| 型号： | SA33CA-73-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| 封装： | PLASTIC, DO-15, 2 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 69K |
| 代理商： | SA33CA-73-E3 |
SA5.0 thru SA170CA
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88378
4
22-Feb-02
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
50
100
150
200
0
25
50
75
100
25
75
125
175
0
50
100
150
200
0
1.0
2.0
3.0
4.0
75
25
125
175
1
10
100
10
100
200
5
100
500
10
100
1,000
10,000
0.1
s 1.0s
10
s
100
s
1.0ms
10ms
0.1
1.0
10
30
Fig. 1 – Peak Pulse Power Rating Curve
P
PPM
—
Peak
Pulse
Power
(kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
td — Pulse Width
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
TA — Ambient Temperature (
°C)
Fig. 2 – Pulse Derating Curve
Fig. 4 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I FSM
—
Peak
Forward
Surge
Current
(A)
Number of Cycles at 60 Hz
8.3ms Single Half Sine-Wave
(JEDEC Method)
P
M(A
V)
,Steady
State
Power
Dissipation
(W)
Fig. 5 – Steady State Power
Derating Curve
TL — Lead Temperature (°C)
L = 0.375" (9.5mm)
Lead Lengths
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
C
J
—
Capacitance
(pF)
VWM — Reverse Stand-off Voltage (V)
Fig. 6 – Capacitance
VR = 0
VR = Rated
Stand-off voltage
Unidirectional
Bidirectional
td
Current Waveforms
Impulse
Exponential
Decay
Half Sine
Square
PPK".5"
PPK
td = 7 tp
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
TJ = 25
°C
f = 1MHZ
Vsig = 50mVp-p
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SA33CA-B | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:Transient Voltage Suppression Diodes |
| SA33CA-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 33V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SA33CA-E3/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SA33CA-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SA33CA-E3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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