参数资料
| 型号： | SA5230DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 11/18页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP LOW VOLTAGE 8-SOIC |
| 标准包装： | 1 |
| 放大器类型： | 通用 |
| 电路数： | 1 |
| 输出类型： | 满摆幅 |
| 转换速率： | 0.25 V/µs |
| 增益带宽积： | 600kHz |
| 电流 - 输入偏压： | 40nA |
| 电压 - 输入偏移： | 400µV |
| 电流 - 电源： | 1.1mA |
| 电流 - 输出 / 通道： | 32mA |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 15 V，±0.9 V ~ 7.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | SA5230DR2GOSCT |
NE5230, SA5230, SE5230
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Single Supply Voltage
VCC
18
V
Dual Supply Voltage
VS
±9
V
Input Voltage (Note 1)
VIN
±9 (18)
V
Differential Input Voltage (Note 1)
±VS
V
CommonMode Voltage (Positive)
VCM
VCC + 0.5
V
CommonMode Voltage (Negative)
VCM
VEE 0.5
V
Power Dissipation (Note 2)
PD
500
mW
Thermal Resistance, JunctiontoAmbient
N Package
D Package
RqJA
130
182
°C/W
Operating Junction Temperature (Note 2)
TJ
150
°C
Operating Temperature Range
NE
SA
SE
TA
0 to 70
40 to 85
40 to 125
°C
Indefinite
s
Storage Temperature
Tstg
65 to 150
°C
Lead Soldering Temperature (10 sec max)
Tsld
230
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Can exceed the supply voltages when VS ≤±7.5 V (15 V).
2. The maximum operating junction temperature is 150°C. At elevated temperatures, devices must be derated according to the package thermal
resistance and device mounting conditions.
Derate above 25°C at the following rates:
N package at 7.7 mW/°C
D package at 5.5 mW/°C.
3. Momentary shorts to either supply are permitted in accordance to transient thermal impedance limitations determined by the package and
device mounting conditions.
RECOMMENDED OPERATING CONDITIONS
Characteristic
Value
Unit
Single Supply Voltage
1.8 to 15
V
Dual Supply Voltage
±0.9 to ±7.5
V
CommonMode Voltage (Positive)
VCC + 0.25
V
CommonMode Voltage (Negative)
VEE 0.25
V
Temperature
NE Grade
SA Grade
SE Grade
0 to +70
40 to +85
40 to +125
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SA5230FE | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Low voltage operational amplifier |
| SA5230N | 功能描述:运算放大器 - 运放 1.8V Single Rail to RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| SA5230NG | 功能描述:运算放大器 - 运放 1.8V Single Rail to Rail Industrial Temp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| SA5232 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Matched dual high-performance low-voltage operational amplifier |
| SA5232D | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Matched dual high-performance low-voltage operational amplifier |
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