参数资料
型号: SA56004HD,112
厂商: NXP Semiconductors
文件页数: 19/43页
文件大小: 516K
描述: IC TEMP SENSOR 8-SOIC
标准包装: 100
功能: 温度监控系统(传感器)
传感器类型: 内部和外部
感应温度: -40°C ~ 125°C
精确度: ±3°C(最小值)
拓扑: ADC(三角积分型),多路复用器,寄存器库
输出类型: I²C?/SMBus?
输出警报:
输出风扇:
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 管件
配用: 568-3615-ND - DEMO BOARD I2C
其它名称: 568-3343-5
935274554112
SA56004HD
SA56004X
All information provided in this document is subject to legal disclaimers.
?NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 7  25 February 2013
19 of 43
NXP Semiconductors
SA56004X
Digital temperature sensor with overtemperature alarms
Event F: Three consecutive measurements have been made with the remote 
temperature below the RCS - TH threshold; the T_CRIT
 output is de-activated (goes
HIGH).
Event G: The remote temp falls below the Remote LOW setpoint.
Event H: Three consecutive measurements are made with the temp below the Remote 
LOW setpoint; ALERT
 output is activated (goes LOW).
Event I: The ALERT
 output is de-activated (goes HIGH) after a above_low_limit
temperature measurement is completed.
7.9.4   Temperature measurement
To measure the remote temperature or the temperature of an externally attached diode,
the device automatically forces two successive currents of about 160 mA and 10 mA at D+
pin. It measures the voltage (V
BE
) between D+ and D-, detects the difference between the
two V
BE
 voltages or the DV
BE
 and then converts the DV
BE
 into a temperature data using
the basic PTAT voltage formula as shown in Equation 1
. The device typically takes about
38 ms to perform a measurement during each conversion period or cycle, which is
selectable by programming the conversion rate register.
(1)
Where:
n = diode ideality factor
k = Boltzmanns constant
T = absolute temperature (癒) = 273 癈 + T (癈)
q = electron charge
ln = natural logarithm
l2, l1 = two source currents
Because the device does not directly convert the sensed V
BE
 as in the old method of
temperature measurement systems, the V
BE
 calibration is not required. Furthermore, the
device remote temperature error is adjusted at the manufacturer to meet the
specifications with the use of the reference diode-connected transistors such as the
2N3904/2N3906. The diode type to be used in customer applications must have the
characteristics as close to the 2N3904/2N3906 as possible in order to obtain optimal
results. Finally, to prevent the effects of system noise on the measured V
BE
 signals, an
external capacitor of about 2200 pF connected between the D+ and D- pins as well as the
grounded-shield cable for the diode connection wires are recommended.
7.9.5   Diode fault detection
The SA56004X is designed with circuitry to detect the fault conditions of the remote diode.
When the D+ pin is shorted to V
DD
 or floating, the Remote Temperature High Byte (RTHB)
register is loaded with +127 癈, the Remote Temperature Low Byte (RTLB) register is
loaded with 0 癈, and the OPEN bit (bit 2 of the Status register) is set. Under the above
conditions of D+ shorted to V
DD
 or floating, if the Remote T_CRIT
 setpoint is set less than
+127 癈, and T_CRIT Mask are disabled, then, the T_CRIT
 output pins will be pulled
V
BE
n
kT
q
----- -
?/DIV>
l2
l1
---- -
?nbsp ?/DIV>
?nbsp ?/DIV>
ln
?/DIV>
=
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