参数资料
型号: SAF-XC164D-8R20F
厂商: INFINEON TECHNOLOGIES AG
元件分类: 微控制器/微处理器
英文描述: 16-BIT, MROM, 20 MHz, MICROCONTROLLER, PQFP100
封装: 0.50 MM PITCH, GREEN, PLASTIC, TQFP-100
文件页数: 53/76页
文件大小: 1143K
代理商: SAF-XC164D-8R20F
XC164D
Derivatives
Electrical Parameters
Data Sheet
55
V1.2, 2006-08
1) An output current above |
IOXnom| may be drawn from up to three pins at the same time.
For any group of 16 neighboring port output pins the total output current in each direction (
ΣI
OL and Σ-IOH) must
remain below 50 mA.
Table 13
Power Consumption XC164D (Operating Conditions apply)
Parameter
Sym-
bol
Limit Values
Unit Test Condition
Min.
Max.
Power supply current (active)
with all peripherals active
I
DDI
15 +
2.6
× f
CPU
mA
f
CPU in [MHz]
1)2)
1) During Flash programming or erase operations the supply current is increased by max. 5 mA.
2) The supply current is a function of the operating frequency. This dependency is illustrated in Figure 11.
These parameters are tested at
VDDImax and maximum CPU clock frequency with all outputs disconnected and
all inputs at
VIL or VIH.
Pad supply current
I
DDP
–5
mA
3)
3) The pad supply voltage pins (
VDDP) mainly provides the current consumed by the pin output drivers. A small
amount of current is consumed even though no outputs are driven, because the drivers’ input stages are
switched and also the Flash module draws some power from the
VDDP supply.
Idle mode supply current
with all peripherals active
I
IDX
15 +
1.2
× f
CPU
mA
f
CPU in [MHz]
Sleep and Power down mode
supply current caused by
leakage4)
4) The total supply current in Sleep and Power down mode is the sum of the temperature dependent leakage
current and the frequency dependent current for RTC and main oscillator (if active).
I
PDL
5)
5) This parameter is determined mainly by the transistor leakage currents. This current heavily depends on the
junction temperature (see Figure 13). The junction temperature
TJ is the same as the ambient temperature TA
if no current flows through the port output drivers. Otherwise, the resulting temperature difference must be
taken into account.
128,000
× e
mA
V
DDI = VDDImax
6)
T
J in [°C]
α =
4670 / (273 +
T
J)
6) All inputs (including pins configured as inputs) at 0 V to 0.1 V or at
VDDP - 0.1 V to VDDP, all outputs (including
pins configured as outputs) disconnected. This parameter is tested at 25
°C and is valid for T
J ≥ 25 °C.
Sleep and Power down mode
supply current caused by
leakage and the RTC running,
clocked by the main oscillator4)
I
PDM
7)
7) This parameter is determined mainly by the current consumed by the oscillator switched to low gain mode (see
Figure 12). This current, however, is influenced by the external oscillator circuitry (crystal, capacitors). The
given values refer to a typical circuitry and may change in case of a not optimized external oscillator circuitry.
0.6 +
0.02
× f
OSC
+
I
PDL
mA
V
DDI = VDDImax
f
OSC in [MHz]
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