参数资料
型号: SAL-XC886CLM-8FFA5V
厂商: INFINEON TECHNOLOGIES AG
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 80 MHz, MICROCONTROLLER, PQFP48
封装: GREEN, PLASTIC, TQFP-48
文件页数: 87/134页
文件大小: 864K
代理商: SAL-XC886CLM-8FFA5V
SAL-XC886CLM
Functional Description
Data Sheet
49
V1.0, 2010-05
3.3
Flash Memory
The Flash memory provides an embedded user-programmable non-volatile memory,
allowing fast and reliable storage of user code and data. It is operated from a single 2.5 V
supply from the Embedded Voltage Regulator (EVR) and does not require additional
programming or erasing voltage. The sectorization of the Flash memory allows each
sector to be erased independently.
Features
In-System Programming (ISP) via UART
In-Application Programming (IAP)
Error Correction Code (ECC) for dynamic correction of single-bit errors
Background program and erase operations for CPU load minimization
Support for aborting erase operation
Minimum program width
1) of 32-byte for D-Flash and 64-byte for P-Flash
1-sector minimum erase width
1-byte read access
Flash is delivered in erased state (read all zeros)
Operating supply voltage: 2.5 V ± 7.5 %
Read access time: 3 ×
t
CCLK = 150 ns
2)
Program time: 248256 /
f
SYS = 3.1 ms
3)
Erase time: 9807360 /
f
SYS = 123 ms
1) P-Flash: 64-byte wordline can only be programmed once, i.e., one gate disturb allowed.
D-Flash: 32-byte wordline can be programmed twice, i.e., two gate disturbs allowed.
2) Values shown here are typical values.
f
sys =80MHz ±7.5% (fCCLK = 20 MHz ± 7.5 %) is the maximum
frequency range for Flash read access.
3) Values shown here are typical values.
f
sys = 80 MHz ± 7.5%
is the only frequency range for Flash
programming and erasing.
f
sysmin is used for obtaining the worst case timing.
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