参数资料
型号: SB007-03C-TB-E
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 273K
描述: DIODE SCHOTTKY 70MA 30V CP
标准包装: 3,000
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 70mA
电压 - 在 If 时为正向 (Vf)(最大): 550mV @ 70mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 10ns
电流 - 在 Vr 时反向漏电: 5µA @ 15V
电容@ Vr, F: 3pF @ 10V,1MHz
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: 3-CP
包装: 带卷 (TR)
71112 TKIM/13107 TIIM TC-00000490 / 71206 / 42506SB MSIM TA-100466 No.A0405-1/5
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
SB007-03C
Schottky Barrier Diode
30V, 70mA, Low IR, Single CP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Applications
?
High frequency recti
?
cation (switching regulators, converters, choppers)
Features
?
Low forward voltage (V
F
max=0.55V)
Low switching noise
?
Fast reverse recovery time (t
rr
max=10ns)
?
?
Low leakage current and high reliability due to highly reliable planar structure
Speci?
cations
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM
30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM
35 V
Average Output Current
IO
70 mA
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle 2 A
Junction Temperature Tj
--55 to +125 °C
Storage Temperature Tstg
--55 to +125 °C
Package Dimensions
unit : mm (typ)
7013A-004
Ordering number : ENA0405B
Product & Package Information
? Package : CP
? JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB
? Minimum Packing Quantity
: 3,000 pcs./reel
Packing Type: TB Marking
Electrical Connection
1 : Anode
2 : No Contact
3 : Cathode
CP
12
0.95
0.4
3
1.5
2.5
1.1
0.3
0.05
2.9
0.1
0.5
0.5
TB
SB007-03C-TB-E
G
LOT No.
LOT No.
3
12
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