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参数资料
| 型号： | SB1060FCT |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 431K |
| 代理商： | SB1060FCT |
PAGE . 2
REV.1-APR.4.2005
RATING AND CHARACTERISTIC CURVES
A
VERAGE
FOR
W
A
RD
CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHRACTERISTIC
Fig.4- TMAXIMUM NON - REPETITIVE SURGE
CURRENT
Fig.3- TYPICAL REVERSE CHARACTERISTIC
CASE TEMPERATURE, C
O
0
50
100
150
25.0
20.0
15.0
10.0
5.0
0
PEAK
FOR
W
A
RD
SURGE
CURRENT
,
AMPERES
NO. OF CYCLE AT 60HZ
240
210
180
150
120
90
60
30
0
12
5
10
20
50
100
8.3ms Single
Half Since-W ave
JEDEC Method
0.2
0.1
1.0
100
10
0.4
0.6
0.8
1.0
T=25 C
A
O
20-40V
80-100V
150V
FOR
W
A
RD
CURRENT
,
AMPERES
FORWARD VOLTAGE, VOLTS
T =100 C
J
O
T=
C
J25
O
V
=20-40V
V
=50-60V
V
=80-150V
RRM
20
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
40
60
80
100
120
REVERSE
CURRENT
,m
A
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
50-60V
相关PDF资料 |
PDF描述 |
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| SB1080FCT | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SB1030TL | 10 A, 30 V, SILICON, RECTIFIER DIODE |
| SB1050DC | 5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| SB1060DCT/R13 | 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SB1060LCT | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:DUAL LOW VF SCHOTTKY RECTIFIER |
| SB1060LFCT | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:DUAL LOW VF SCHOTTKY RECTIFIER |
| SB106G | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers |
| SB106P125-W-AG | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 106 Mils, 125 Volt, 10 Amp |
| SB106P125-W-AG/AL | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 106 Mils, 125 Volt, 10 Amp |
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