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参数资料
| 型号： | SB1060LFCT |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 88K |
| 代理商： | SB1060LFCT |
PAGE . 1
May 4,2010-REV.00
SB1060LFCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE
60 Volts
10 Amperes
FEATURES
Low forward voltage drop, low power losses
High efficiency operation
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : ITO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.065 ounces, 1.859 grams
CURRENT
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
Note.1.Pulse test : 300
μs pulse width, 1% duty cycle
2.Pulse test : pulse width < 40ms
.027(.67)
.022(.57)
.177(4.5) .137(3.5)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
60
V
Maximum average forward rectified current (Fig.1)
per device
per diode
I F(AV)
10
5
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
per diode
I FSM
125
A
Typ i c a l t her m a l r e si st ance
RΘJC
4. 5
O C / W
Operating junction
TJ
-55 to + 125
oC
Storage temperature range
TSTG
-55 to + 150
oC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Breakdown voltage
VBR
I R=1mA
68
-
V
Instantaneous forward voltage per
diode (1)
VF
I F=2.5A
I F=5A
TJ=25oC
-
0.40
0.45
-
0.48
V
I F=2.5A
I F=5A
TJ=125oC
-
0.30
0.39
-
0.45
V
Reverse current per diode (2)
I R
VR=60V
TJ=25oC
TJ=100oC
-
200
-
500
30
μA
mA
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