参数资料
型号: SB10W05P
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封装: PCP, 3 PIN
文件页数: 1/2页
文件大小: 71K
代理商: SB10W05P
43098HA (KT)/53196GI/42294YH (KOTO) 8-7182 No.4170-1/2
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Schottky Barrier Diode (Twin Type Cathode Common)
50V, 1A Rectifier
Ordering number:EN4170A
SB10W05P
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Specifications
Absolute Maximum Ratings at Ta = 25C (Value per element)
Electrical Characteristics at Ta = 25C (Value per element)
C
Marking:SL
trr Test Circuit
1:Anode
2:Cathode
3:Anode
SANYO:PCP
(Bottom view)
Package Dimensions
unit:mm
1222A
[SB10W05P]
Electrical Connection
Applications
High frequency rectification (switching regulators,
converters, choppers).
Features
Low forward voltage (VF max=0.55V).
Fast reverse recovery time (trr max=10ns).
Low switching noise.
Low leakage current and high reliability due to
highly reliable planar structure.
1:Anode
2:Cathode
3:Anode
(Top view)
Mounted on 250mm2
×0.8mm ceramic board
C/W
相关PDF资料
PDF描述
SB15H45-E3/54 7 A, 45 V, SILICON, RECTIFIER DIODE
SB20-05T-TP-FA 2 A, 50 V, SILICON, RECTIFIER DIODE
SB20-05T-TP 2 A, 50 V, SILICON, RECTIFIER DIODE
SB20-05T-TP-FA 2 A, 50 V, SILICON, RECTIFIER DIODE
SBE807 1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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