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参数资料
| 型号： | SB1100-T |
| 厂商： | Diodes Inc |
| 文件页数： | 1/2页 |
| 文件大小： | 59K |
| 描述： | DIODE SCHOTTKY 100V 1A DO-41 |
| 其它图纸： | 1N(40,58), SR Series Top |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 100V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-204AL，DO-41，轴向 |
| 供应商设备封装： | DO-41 |
| 包装： | 剪切带 (CT) |
| 产品目录页面： | 1590 (CN2011-ZH PDF) |
| 其它名称： | SB1100CT SB1100CT-ND SB1100DICT |
DS30116 Rev. 3 - 1 1 of 2 SB170 - SB1100
www.diodes.com
Diodes Incorporated
SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Maximum Ratings and Electrical Characteristics
@ TA
= 25C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 25A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
High Temperature Soldering: 260C/10 Second at Terminal
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Bright Tin. Plated Leads - Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Ordering Information: See Last Page
Marking: Type Number
Weight: 0.3 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
A
A
B
C
D
Characteristic Symbol SB170 SB180 SB190 SB1100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70 80 90 100 V
RMS Reverse Voltage
VR(RMS)
49 56 63 70 V
Average Rectified Output Current @ TT
= 85C
IO
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
25 A
Forward Voltage @ IF
= 1.0A @ TA
= 25C
VFM
0.80 V
Peak Reverse Current @ TA
= 25C
at Rated DC Blocking Voltage @ TA
= 100C
IRM
0.5
10
mA
Typical Junction Capacitance (Note 2)
Cj
80 pF
Typical Thermal Resistance Junction to Lead
RJL
15 K/W
Typical Thermal Resistance Junction to Ambient (Note 1)
RJA
50 K/W
Operating and Storage Temperature Range
Tj,
TSTG
-65 to +125
C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DO-41
Dim Min Max
A
25.4
B
4.1 5.2
C
0.71 0.86
D
2.0 2.7
All Dimensions in mm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SB1100-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE |
| SB1100TA | 制造商:World Products 功能描述: |
| SB1100-TB | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE |
| SB1100-TR | 制造商:LITEON-SEMI 功能描述:REVERSE VOLTAGE - 70 to 100 Volts, FORWARD CURRENT - 1.0 Ampere |
| SB11-04HP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:40V, 1.1A Rectifier |
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