参数资料
型号: SB1100
厂商: Fairchild Semiconductor
文件页数: 1/3页
文件大小: 43K
描述: DIODE SCHOTTKY 1A 100V DO-41
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 850mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 100V
电容@ Vr, F: 110pF @ 4V,1MHz
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL(DO-41)
包装: 剪切带 (CT)
其它名称: SB1100FSCT
SB120-SB1
100
?2001 Fairchild Semiconductor Corporation
SB120-SB1100, Rev.
C
SB120 - SB1100
Schottky Rectifiers
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation 1.25 W
RθJA
Thermal Resistance, Junction to Ambient 80
°C/W
Features
?
1.0 ampere operation at TA
= 75°C
with no thermal runaway.
?
For use in low voltage, high frequency
inverters free wheeling, and polarity
protection applications.
Symbol
Parameter
Device
Units
120 130 140 150 160 180 1100
VF
Forward Voltage @ 1.0 A 500 700 850 mV
IR
Reverse Current @ rated VR TA = 25°C
0.5
mA
10
mA
T
A = 100°C
Maximum Full Load Reverse Current, Full Cycle
30 mA
Irr
T
A = 75°C
CT
Total Capacitance
V
R = 4.0 V, f = 1.0 MHz
110 pF
Symbol
Parameter
Value
Units
120 130 140 150 160 180 1100
VRRM
Maximum Repetitive Reverse Voltage 20 30 40 50 60 80 100 V
IF(AV)
Average Rectified Forward Current
.375 " lead length @ TA
= 75
°C
1.0 A
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
30 A
Tstg
Storage Temperature Range -65 to +125
°C
TJ
Operating Junction Temperature -65 to +125
°C
Thermal Characteristics
DO-41
COLOR BAND DENOTES CATHODE
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