- 您现在的位置：买卖IC网 > PDF目录231077 > SB1100TR (FAIRCHILD SEMICONDUCTOR CORP) 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 PDF资料下载
参数资料
| 型号： | SB1100TR |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| 文件页数： | 1/2页 |
| 文件大小： | 36K |
| 代理商： | SB1100TR |
SB120-SB1
100
SB120 - SB1100
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
.375 " lead length @ TL = 75
°C
1.0
A
if(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
30
A
PD
Total Device Dissipation
Derate above 25
°C
1.25
12.5
W
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
80
°C/W
Tstg
Storage Temperature Range
-65 to +125
°C
TJ
Operating Junction Temperature
-65 to +125
°C
Discrete POWER & Signal
Technologies
1998 Fairchild Semiconductor Corporation
Features
1.0 ampere operation at T
A
= 75°C
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Parameter
Device
Units
120
130
140
150
160
180
1100
Peak Repetitive Reverse Voltage
20
30
40
50
60
80
100
V
Maximum RMS Voltage
14
21
28
35
42
56
80
V
DC Reverse Voltage (Rated VR)
20
30
40
50
60
80
100
V
Maximum Reverse Current
@ rated VR
TA = 25
°C
TA = 100
°C
0.5
10
mA
Maximum Forward Voltage @ 1.0 A
500
700
850
mV
Maximum Full Load Reverse Current,
Full Cycle
TA = 75
°C
30
mA
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
110
pF
DO-41
COLOR BAND DENOTES CATHODE
1.0 min
(25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
Dimensions in
inches (mm)
相关PDF资料 |
PDF描述 |
|---|---|
| SDA37AUFTXV | 3 PHASE, 3 A, SILICON, BRIDGE RECTIFIER DIODE |
| SDA803BTX | 6 A, SILICON, BRIDGE RECTIFIER DIODE |
| SDA803CTXV | 6 A, SILICON, BRIDGE RECTIFIER DIODE |
| SAM15SMSTX | 2 A, 1500 V, SILICON, RECTIFIER DIODE |
| SAM25FSMSS | 1.5 A, 2500 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB1100-TR | 制造商:LITEON-SEMI 功能描述:REVERSE VOLTAGE - 70 to 100 Volts, FORWARD CURRENT - 1.0 Ampere |
| SB11-04HP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:40V, 1.1A Rectifier |
| SB11-04HP-TR-E | 功能描述:肖特基二极管与整流器 SCHOTTKY DIODE 1.1A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB1105100M1 | 制造商:ABC 制造商全称:ABC Taiwan Electronics Corp 功能描述:SMD POWER INDUCTOR |
| SB1105101K1 | 制造商:ABC 制造商全称:ABC Taiwan Electronics Corp 功能描述:SMD POWER INDUCTOR |
发布紧急采购，3分钟左右您将得到回复。