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参数资料
| 型号： | SB120 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 158K |
| 代理商： | SB120 |
Low power loss, high efficiency.
High reliability
High surge current capability
Epitaxial construction
Guard-ring for transient protection
DO-41
(Plastic)
MECHANICAL DATA
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free., solderable
Jan - 08
SB120 - SB1150
1 Amp. Schottky Barrier Rectifiers
Maximum Ratings and Electrical Characteristics at 25 C
VRRM
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
IFSM
8.3 ms.Peak Forward Surge Current
50
VDC
Maximum DC Blocking Voltage (V)
50
30 A
High current capability. low VF
VRMS
35
Tj
Operating Temperature Range
-65 to +150 °C
SB
150
(Jedec Method)
Current
1.0 A
Voltage
20 V to 150 V
protection application
For use in low voltage, high frequency
inventor, free wheeling, and polarity
Cases: DO-41 molded plastic
Polarity: Color band denotes cathode
20
14
SB
120
30
21
SB
130
40
28
SB
140
60
42
SB
160
90
63
SB
190
100
70
SB
1100
150
105
SB
1150
NOTES:
1. Mount on Cu-Pad Size 5mnm x 5mm on P.C.B.
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Typical Thermal Resistance
IF(AV)
Maximum Average Forward Rectified Current
1.0 A
90 °C/W
Rth (j-a)
Tstg
Storage Temperature Range
-65 to +150 °C
Electrical Characteristics at Tamb = 25 °C
0.70 V
VF
Maximum Instantaneous Forward Voltage IF =1.0 A
0.55 V
0.80 V
0.95 V
IR
5.0 mA
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage
Ta =125°C
0.5 mA
10 mA
0.1 mA
2.0 mA
Cj
Typical Junction Capacitance
65 pF
Pb
Dimensions in mm.
80 pF
28 pF
(Note 2)
(Note 1)
at 5 Ibs., (2.3 Kg) tension
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed:
Weight: 0.33 g.
260 °C/10 seconds/9.5 mm lead lengths
(See graphic)
-65 to +125 °C
相关PDF资料 |
PDF描述 |
|---|---|
| SB130 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| SB12100-BP | 12 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB1220-BP | 12 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB1240-AP | 12 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB1250-TP | 12 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB120 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SB120_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SB120_05 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| SB120_06 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE |
| SB120_07 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
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