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参数资料
| 型号： | SB120 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 132K |
| 代理商： | SB120 |
SB120 thru SB140
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
–
20 to 40 Volts
FORWARD CURRENT
–
1.0 Amperes
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection application
MECHANICAL DATA
Case: JEDEC DO-41 molded plastic
Polarity: Color band denotes cathode
Weight:0.012 ounces, 0.34 grams
Mounting position: Any
DO-41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
SYMBOL
SB120
SB130
SB140
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
20
30
40
V
Maximum RMS Voltage
VRMS
14
21
28
V
Maximum DC Blocking Voltage
VDC
20
30
40
V
Maximum Average Forward Rectified Current
0.395”(9.5mm) Lead length
@TL=105°C
IAV
1.0
A
Peak Forward Surge 8.3ms single half
sine-wave super imposed on rated load
IFSM
40
A
Maximum forward Voltage at 1.0A DC
VF
0.5
V
Maximum DC Reverse Current
@Tj=25°C
at Rated DC Blocking Voltage
@Tj=100°C
IR
0.5
10
mA
Typical Junction Capacitance(Note 1)
Cj
50
pF
Typical Thermal Resistance (Note 2)
RΘJL
35
°C/W
Operating Temperature Range
Tj
-55 to +125
°C
Storage Temperature Range
TSTG
-55 to +150
°C
REV. 0, Sep-2008, KDHC06
Note : (1) Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(2) Thermal Resistance Junction to Lead
相关PDF资料 |
PDF描述 |
|---|---|
| SB130 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| SB130 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB150 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 |
| SB2045CT | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SB2020CT | 10 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB120 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SB120_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SB120_05 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| SB120_06 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE |
| SB120_07 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
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