NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
CJ
@TJ=100 C
SB120 thru SB160
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
30
21
30
SB120
20
14
20
60
42
60
50
35
50
40
28
40
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Lengths
@TL
=100 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25 C
Typical Junction
Capacitance (Note 1)
1.0
40
0.50
0.5
10
110
TJ
Operating Temperature Range
-55 to +125
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R0JL
15
C/W
pF
mA
V
A
V
UNIT
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B
25.4
5.20
-
4.10
0.71
2.00
2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS
SYMBOL
0.70
80
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 20 to 60 Volts
FORWARD CURRENT - 1.0 Ampere
SB130
SB140
SB150
SB160
SEMICONDUCTOR
LITE-ON
REV. 3, Apr-2005, KDHC02
-55 to +150