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参数资料
| 型号： | SB130E |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 125K |
| 代理商： | SB130E |
PAGE . 1
STAD-FEB.15.2005
DATA SHEET
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
Exceeds environmental standards of MIL-S-19500/228
For use in low voltage,high frequency inverters ,free wheeling ,
and polarity protection applications .
MECHANICALDATA
Case: DO-41 Molded plastic
Terminals: Axial leads, solderable per MIL-STD-202G,Method 208
Polarity: Color band denotes cathode
Mounting Position: Any
Weight: 0.012 ounces, 0.34grams
SB120E~SB160E
SCHOTTKY BARRIER RECTIFIERS
DO-41
Unit: inch(mm)
.034(.86)
.107(2.7)
.028(.71)
.080(2.0)
1.0(25.4)MIN.
.205(5.2)
.160(4.1)
VOLTAGE
20 to 60 Volts
1.0 Amperes
CURRENT
MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS
Ratings at 25
OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
PARAMETER
SYMBOL
SB120E
SB130E
SB140E
SB150E
SB160E
UNITS
Maximum Recurrent Peak Reverse
Voltage
V RRM
20
30
40
50
60
V
Maximum RMS Voltage
V RMS
14
21
28
35
42
V
Maximum DC Blocking Voltage
V DC
20
30
40
50
60
V
Maximum Average Forward Rectified
Curren .375" (9.5mm) lead length at
TA =75
O
C
I AV
1.0
A
Peak Forward Surge Current :8.3ms single
half sine-wave superimposed on rated
load(JEDEC method)
I FSM
30
A
Maximum Forward Voltage at 1.0A
V F
0.50
0.70
V
Maximum DC Reverse Current TA=25
O
C
at Rated DC Blocking Voltage TA=100
O
C
I R
0.5
10
mA
Maximum Thermal Resistance
R ΘJA
50
O
C / W
Operating Junction and Storage
Temperature Range
T J, T STG
-50 TO +125
O
C
Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
. ESD Passed devices : Air mode 15KV ,human body mode 8KV
相关PDF资料 |
PDF描述 |
|---|---|
| SB150E | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 |
| SB12100 | 12 A, 100 V, SILICON, RECTIFIER DIODE |
| SB1240 | 12 A, 40 V, SILICON, RECTIFIER DIODE |
| SB1250 | 12 A, 50 V, SILICON, RECTIFIER DIODE |
| SB1260 | 12 A, 60 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB130-E | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A |
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| SB130E3/54 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 1A 2-Pin DO-204AL T/R 制造商:Vishay 功能描述:Diode Schottky 30V 1A 2-Pin DO-204AL T/R |
| SB130-E3/54 | 功能描述:肖特基二极管与整流器 20 Volt 1.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB130-E3/73 | 功能描述:肖特基二极管与整流器 20 Volt 1.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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