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参数资料
| 型号： | SB1H100-E3/23 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 77K |
| 代理商： | SB1H100-E3/23 |
Vishay General Semiconductor
SB1H90 & SB1H100
New Product
Document Number 88716
18-May-06
www.vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for improved high temperature performance
FEATURES
High barrier technology for improved high Tj
Guardring for overvoltage protection
Low power losses and high efficiency
Low forward voltage drop
Very low leakage current
High forward surge capability
High frequency operation
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling,
dc-to-dc
converters
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-204AL (DO-41)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
1.0 A
VRRM
90 V, 100 V
IFSM
50 A
VF
0.62 V
IR
1.0 A
Tj max.
175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB1H90
SB1H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum RMS voltage
VRMS
63
70
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Peak repetitive reverse surge current at tp = 2.0 s, 1 kHz
IRRM
1.0
A
Maximum operating junction temperature
TJ
175
°C
Storage temperature range
TSTG
- 55 to + 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SB1H100-HE3/73 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB1H90-E3/54 | 1 A, 90 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB200-09R | 20 A, 90 V, SILICON, RECTIFIER DIODE |
| SB80-05J | 8 A, 50 V, SILICON, RECTIFIER DIODE |
| SB80-09J | 8 A, 90 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB1H100-E3-54 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier |
| SB1H100-E3-73 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier |
| SB1H100HE3/54 | 功能描述:肖特基二极管与整流器 100 Volt 1.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB1H100HE3/73 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance |
| SB1H100HE3-54 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier |
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