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参数资料
| 型号： | SB2080LCT |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 52K |
| 代理商： | SB2080LCT |
PAGE . 1
June 28,2011-REV.00
SB2080LCT
LOW VF SCHOTTKY RECTIFIER
VOLTAGE
80 Volts
20 Amperes
FEATURES
Low forward voltage drop, low power losses
High efficiency operation
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams.
CURRENT
MAXIMUM RATINGS (TA=25oC unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Note:1.Mounted on infinite heatsink
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
80
V
Maximum rms voltage
VRMS
56
V
Maximum average forward rectified current
per device
per diode
I F(AV)
20
10
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
per diode
I FSM
200
A
Typical thermal resistance per diode
(Note 1)
RΘJC
2
oC/W
Operating junction temperature range
TJ
-55 to + 150
oC
Storage temperature range
TSTG
-55 to + 150
oC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Breakdown voltage per diode
VBR
I R=1.0mA
80
-
V
Instantaneous forward voltage per
diode
VF
I F=3A
I F=5A
I F=10A
TJ=25oC
-
0.41
0.45
0.55
-
0.65
V
I F=3A
I F=5A
I F=10A
TJ=125oC
-
0.32
0.39
0.52
-
V
Reverse current per diode
I R
VR=64V
-
41
-
μA
VR=80V
TJ=25oC
TJ=100oC
-
18
300
-
μA
mA
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.100(2.54)
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
0.115(2.92)
0.080(2.03)
0.025(0.65)MAX.
0.
177(
4.5)
M
A
X
.
0.
50(
12.7)
M
IN
.
0.
624(
15.87)
0.
548(
13.93)
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