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参数资料
| 型号： | SB2H90-HE3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 2 A, 90 V, SILICON, RECTIFIER DIODE, DO-204AC |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 77K |
| 代理商： | SB2H90-HE3/54 |
Vishay General Semiconductor
SB2H90 & SB2H100
New Product
Document Number 88718
18-May-06
www.vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for improved high temperature performance
FEATURES
Guardring for overvoltage protection
Low power losses and high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling,
dc-to-dc
converters
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-204AC (DO-15)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-204AC (DO-15)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
2.0 A
VRRM
90 V, 100 V
IFSM
75 A
VF
0.65 V
IR
10 A
Tj max.
175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB2H90
SB2H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TA = 25 °C
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
75
A
Peak repetitive reverse surge current at tp = 2.0 s, 1 kHz
IRRM
1.0
A
Critical rate of rise of reverse voltage
dv/dt
10000
V/s
Storage temperature range
TSTG
- 55 to + 175
°C
Maximum operating junction temperature
TJ
175
°C
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