参数资料
型号: SB3150
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 整流器
英文描述: 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD
封装: PLASTIC PACKAGE-2
文件页数: 2/3页
文件大小: 127K
代理商: SB3150
RATING AND CHARACTERISTIC CURVES
SB3150
FIG.1- FORWARD CURRENT DERATING CURVE
0
0.5
1
1.5
2
2.5
3
3.5
0
25
50
75
100
125
150
LEAD TEMPERAT URE, (
℃)
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.2- MAXIMUM NON-REPETITIVE SURGE
CURRENT
0
10
20
30
40
50
60
70
80
1
10
100
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
(A
)
FIG.3- TYPICAL JUNCTION CAPACITANCE
10
100
1000
1
10
100
REVERSE VOLT AGE, VOLTAGES
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
0.1
1
10
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
INSTANT ANEOUS FORWARD VOLTAGE, VOLTS
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
FIG.5- TYP ICAL RE VERSE CHARACTERISTICS
0.0001
0.001
0.01
0.1
1
10
20
30
40
50
60
70
80
90
100
110
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,
(m
A
)
FIG.6- DC REVERSE VOLTAGE DERATING CURVE
0
20
40
60
80
100
120
0
25
50
75
100
125
150
AMBIENT TEMPERATURE, (
℃)
P
E
R
C
E
N
T
O
F
D
C
R
E
V
E
R
S
E
V
O
L
T
A
G
E
,
(%
)
Tj=50℃
Tj=25℃
Tj=25℃, f=1MHz
8.3ms Single Half Sine-Wave
Tj=100℃
Mounted pad on glass-epoxy
substrate with 1oz/ft
2_
5mm
Through hole diameter_1.5mm
Rthj-a=35
/W
Tj=75℃
Tj=125℃
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