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参数资料
| 型号： | SB350 |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 140K |
| 代理商： | SB350 |
Number: DB-103
Apr.2010 / C.
Page 1
Preliminary Data Sheet
SB320 THRU SB3100
3.0AMP.
Schottky Barrier Rectifier
VOLTAGE:20 TO 100V
CURRENT:3.0A
Specification Features:
Case: Epoxy, Molded
Weight:1.2Gram (Approximately)
High current capability,Low Forward Voltage Drop
High surge current capability
Finish: All External Surfaces Corrosion Resistant And Terminal Leads Are
Readily Solderable
Lead And Mounting Surface Temperature For Soldering Purposed:
260℃ Max. For 10 Seconds 1/16 Inch From Case
RoHS Compliant
Cathode Indicated By Polarity Band
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Parameter
Symbol
SB
320
SB
330
SB
340
SB
350
SB
360
SB
380
SB
3100
Units
Maximum Repetitive Peak
Reverse Voltage
VRRM
20
30
40
50
60
80
100
V
Maximum DC Blocking Voltage
VR
20
30
40
50
60
80
100
V
Maximum Average Forward
Rectifier Current.
(0.375” Lead Length @ TA=75℃)
IF(AV)
3.0
A
Non-repetitive Peak Forward
Surge Current.
(8.3mS Single Half Sine-wave)
IFSM
80
A
Operating Junction Temperature
TJ
100
150
°C
Storage Temperature Range
TSTG
-55 to +100
-55 to +150
°C
Thermal Resistance （Note 1）
(Junction to Ambient)
RθJA
30
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Symbol
SB
320
SB
330
SB
340
SB
350
SB
360
SB
380
SB
3100
Units
Maximum D.C Reverse Current
At Rated D.C Blocking Voltage
@ TA=25℃
@ TA=100℃
IR
1.0
30.0
mA
Forward Voltage @3A
VF
0.550
0.750
0.850
V
Total Capacitance
@VR=4V, f=1MHz
CT
180
pF
NOTE:
(1) Thermal resistance from junction to ambient at 0.375” lead length, vertical P.C. board mounted
AXIAL LEAD
DO-201AD
SB320
through
SB3100
Series
DEVICE MARKING DIAGRAM
SB3XX : Device Name SB320~ SB3100
KEL
: KEL Logo
SB3X
X
KEL
相关PDF资料 |
PDF描述 |
|---|---|
| SB3100 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB40W03TP-FA | 4 A, 30 V, SILICON, RECTIFIER DIODE |
| SB40W03TP | 4 A, 30 V, SILICON, RECTIFIER DIODE |
| SB540 | 5 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB520 | 5 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB350 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SB350 | 制造商:SPC Multicomp 功能描述:DIODE SCHOTTKY 3A 50V |
| SB350/1 | 功能描述:肖特基二极管与整流器 3.0 Amp 50 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB350/4 | 功能描述:肖特基二极管与整流器 3.0 Amp 50 Volt 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB350/54 | 功能描述:肖特基二极管与整流器 3.0 Amp 50 Volt 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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