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参数资料
| 型号： | SB350S-E3/73 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AC |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 67K |
| 代理商： | SB350S-E3/73 |
Document Number: 88819
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Schottky Barrier Rectifier
SB320S thru SB360S
Vishay General Semiconductor
New Product
FEATURES
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High frequency operation
20 kV ESD capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
20 V to 60 V
IFSM
100 A
VF
0.50 V, 0.70 V
TJ max.
125 °C, 150 °C
DO-204AC (DO-15)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB320S
SB330S
SB340S
SB350S
SB360S
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R = 1.5 k
Ω
VC
20
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SB320 | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB360 | 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB330 | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB320 | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB360-E3/54 | 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB350-T | 功能描述:肖特基二极管与整流器 3.0A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB350-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER RECTIFIER |
| SB350-TB | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER RECTIFIER |
| SB350T-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Leaded Schottky Barrier Rectifiers |
| SB351 | 功能描述:桥式整流器 35A 100V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
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