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参数资料
| 型号： | SB360A-E3/73 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 78K |
| 代理商： | SB360A-E3/73 |
Document Number: 88925
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 14-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Schottky Barrier Rectifier
SB320A thru SB360A
Vishay General Semiconductor
Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
FEATURES
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High frequency operation
20 kV ESD capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
20 V to 60 V
IFSM
80 A
VF
0.50 V, 0.70 V
TJ max.
150 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB320A
SB330A
SB340A
SB350A
SB360A
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R = 1.5 k
VC
20
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SB340A-E3/73 | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB320A | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB340A-E3 | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB330A-E3 | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB340A | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB360-B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:3.0A SCHOTTKY BARRIER RECTIFIER |
| SB360B-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Leaded Schottky Barrier Rectifiers |
| SB360D | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:DPAK SURFACE MOUNT SCHOTTKYBARRIER RECTIFIER |
| SB360E | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 3Amp 40~100Volt |
| SB360-E | 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:SCHOTTKY BARRIER RECTIFIER VOLTAGE: 40 to 60V CURRENT: 3.0A |
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