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参数资料
| 型号： | SB380-T |
| 厂商： | Diodes Inc |
| 文件页数： | 1/3页 |
| 文件大小： | 78K |
| 描述： | DIODE SCHOTTKY 3A 80V DO-201AD |
| 标准包装： | 1,200 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 80V |
| 电流 - 平均整流 (Io)： | 3A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 790mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 80V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AD，轴向 |
| 供应商设备封装： | DO-201AD |
| 包装： | 带卷 (TR) |
SB370 - SB3100
3.0A SCHOTTKY BARRIER RECTIFIER
Features
?
Schottky Barrier Chip
?
Guard Ring Die Construction for Transient Protection
?
Low Power Loss, High Efficiency
?
High Surge Capability
?
High Current Capability and Low Forward Voltage Drop
?
Surge Overload Rating to 80A Peak
?
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
?
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
?
Case: DO-201AD
?
Case Material: Molded Plastic.
UL Flammability Classification
Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020C
?
Terminals: Finish - Tin. Solderable per MIL-STD-202,
Method 208
?
Polarity: Cathode Band
?
Marking Information: See Page 3
?
Ordering Information: See Page 3
?
Weight: 1.1 grams (approximate)
Maximum Ratings and Electrical Characteristics
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
SB370
SB380
SB390
SB3100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
80
90
100
V
RMS Reverse Voltage
VR(RMS)
49
56
63
70
V
Average Rectified Output Current
(Note 1)
@ TL
= 80
°C
IO
3.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
100
A
Forward Voltage
@ IF
= 3.0A
VFM
0.79
V
Peak Reverse Current
@ TA
= 25
°C
at Rated DC Blocking Voltage
@ TA
= 100
°C
IRM
0.5
20
mA
Typical Junction Capacitance (Note 2)
Cj
250
pF
Thermal Characteristics
Characteristic
Symbol
SB370
SB380
SB390
SB3100
Unit
Typical Thermal Resistance Junction to Ambient
RθJA
20
K/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, See EU Directive Annex Notes 5 and 7.
SB370 - SB3100
Document number: DS30134 Rev. 3 - 2
1 of 3
www.diodes.com
July 2008
? Diodes Incorporated
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