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参数资料
| 型号： | SB3H100-E3/51 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 78K |
| 代理商： | SB3H100-E3/51 |
Vishay General Semiconductor
SB3H90 & SB3H100
New Product
Document Number 88720
18-May-06
www.vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for improved high temperature performance
FEATURES
Guardring for overvoltage protection
Low power losses and high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
middle
voltage
high
frequency
inverters, freewheeling, dc-to-dc converters, and
polarity protection applications.
MECHANICAL DATA
Case: DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-201AD
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
3.0 A
VRRM
90 V, 100 V
IFSM
100 A
VF
0.65 V
IR
20 A
Tj max.
175 °C
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB3H90
SB3H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum working reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TL = 90 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 s, 1 kHz
IRRM
1.0
A
Critical rate of rise of reverse voltage
dv/dt
10000
V/s
Storage temperature range
TSTG
- 55 to + 175
°C
Maximum operating junction temperature
TJ
175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB3H90
SB3H100
UNIT
Maximum instantaneous forward
voltage at: (1)
IF = 3.0 A,
TJ = 25 °C
TJ = 125 °C
VF
0.80
0.65
V
Maximum DC reverse current at
rated DC blocking voltage
TJ = 25 °C
TJ = 125 °C
IR
20
4.0
A
mA
相关PDF资料 |
PDF描述 |
|---|---|
| SB3H90-HE3/73 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB402L | 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
| SB400L | 4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE |
| SB401L | 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
| SB4030PT | 40 A, 30 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB3H100-E3-54 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier |
| SB3H100-E3-73 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier |
| SB3H100HE3/54 | 功能描述:肖特基二极管与整流器 100 Volt 3.0 Amp 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB3H100HE3/73 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance |
| SB3H90 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Voltage Schottky Rectifier |
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