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参数资料
| 型号： | SB5120 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 120 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 128K |
| 代理商： | SB5120 |
SB5120
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
–
120 Volts
FORWARD CURRENT
–
5.0 Amperes
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection application
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 grams
Mounting position : Any
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
CHARACTERISTICS
SYMBOL
SB5120
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
120
V
Maximum RMS Voltage
VRMS
84
V
Maximum DC Blocking Voltage
VDC
120
A
Maximum Average Forward Rectified Current
IAV
5.0
A
Peak Forward Surge 8.3ms single half sine-wave
superimposed on rated load
IFSM
150
A
Maximum Forward Voltage at 5.0A DC
VF
0.86
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@Tj=25°C
@Tj=100°C
@Tj=150°C
IR
0.008
5
50
mA
Typical Thermal Resistance_Junction to Lead (Note 1)
RΘJL
10
°C/W
Typical Thermal Resistance_Junction to Case (Note 1)
RΘJC
8
°C/W
Typical Thermal Resistance_Junction to Ambient (Note 1)
RΘJA
27
°C/W
Typical Junction Capacitance (Note 2)
Cj
150
pF
Operating Junction Temperature Range
Tj
-55 to +175
°C
Storage Temperature Range
TSTG
-55 to +175
°C
REV.1, Oct-2010, KDHF13
Note:
(1) Unit mounted on glass-epoxy substrate with 1oz/ft2_5mm
(2) Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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