- 您现在的位置：买卖IC网 > PDF目录40077 > SB520-E3/73 (VISHAY SEMICONDUCTORS) 5 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD PDF资料下载
参数资料
| 型号： | SB520-E3/73 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 64K |
| 代理商： | SB520-E3/73 |
Document Number: 88721
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Schottky Barrier Rectifier
SB520 thru SB560
Vishay General Semiconductor
FEATURES
Guardring for overvoltage protection
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
20 V to 60 V
IFSM
220 A
VF
0.48 V, 0.65 V
TJ max.
150 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB520
SB530
SB540
SB550
SB560
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
5.0
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
220
A
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB520
SB530
SB540
SB550
SB560
UNIT
Maximum instantaneous
forward voltage
5.0 A
VF (1)
0.48
0.65
V
Maximum instantaneous
reverse current at rated
DC blocking voltage
TA = 25 °C
IR (1)
0.5
mA
TA = 100 °C
50
25
相关PDF资料 |
PDF描述 |
|---|---|
| SB530-E3/54 | 5 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB520A-E3/73 | 5 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB540A-E3/54 | 5 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB550A-E3/54 | 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB560A-E3/54 | 5 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB520EA-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:ESD Leaded Schottky Barrier Rectifiers |
| SB520EB-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:ESD Leaded Schottky Barrier Rectifiers |
| SB520E-G | 功能描述:DIODE SCHOTTKY 5A 20V DO-201AD RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| SB520ET-G | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB520FC | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 5Amp 20~100Volt |
发布紧急采购，3分钟左右您将得到回复。