参数资料
型号: SB540B-G
厂商: Comchip Technology
文件页数: 1/3页
文件大小: 54K
描述: DIODE SCHOTTKY 5A 40V DO-201AD
标准包装: 200
二极管类型: 肖特基
电压 - (Vr)(最大): 40V
电流 - 平均整流 (Io): 5A
电压 - 在 If 时为正向 (Vf)(最大): 550mV @ 5A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 40V
电容@ Vr, F: 350pF @ 4V,1MHz
安装类型: 通孔
封装/外壳: DO-201AD,轴向
供应商设备封装: DO-201AD
包装: 散装
Leaded Schottky Barrier Rectifiers
QW-BB051
Page 1
REV:A
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
V
oltage: 20 to 100 V
Current: 5.0
A
RoHS Device
SB520-G Thru. SB5100-G
Dimensions
in
inches
and
(millimeter)
DO-201AD
Comchip Technology CO., LTD.
1.0(25.4) Min.
1.0(25.4) Min.
0.375(9.5)
0.287(7.3)
0.210(5.3)
0.189(4.8)
0.052(1.30)
0.048(1.20)
Features
Mechanical data
-
Low drop down voltage.
-
Metal-Semiconductor junction with guard ring
-
High surge current capability
-
Silicon epitaxial planar chips.
-
Lead-free part, meet RoHS requirements.
-
Epoxy: UL94-V0 rated flame retardant
-
Case: Molded plastic body DO-201AD
-
Terminals: Solderable per MIL-STD-750 Method 2026
-
Polarity: Color band denotes cathode end
-
Mounting Position: Any
-
Weight: 1.12grams
-For use in low voltage, high ef
ficiency inverters,
free wheeling, and polarity protection applications
Parameter
Symbol
Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (12.7mm) lead length at TA=75°C, See Figure 1
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method)
T
L=110°C
Maximum forward voltage at
5.0A
(Note 1)
Maximum DC reverse current
T
A=25°C
At rated DC blocking voltage TA=100°C
Typical junction capacitance (Note 2)
Operating junction
temperature range
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
CJ
TJ
-65 to +150
V
V
V
A
A
V
pF
°C/W
mA
NOTES:
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
.
Storage temperature range
3
. Thermal resistance
junction
t
o
a
mbient and
from
j
unction
t
o
l
ead
P
.C.B
m
ounted
0
.500”(12.7mm)lead
l
ength
w
ith
2
.5*2.5”(63.5*63.5mm)
c
opper
p
ad..
TSTG
°C
°C
Typical thermal resistance
(Note 3)
RθJA
RθJL
20
20
40
40
45
45
50
50
60
60
80
80
100
100
14
28
30
35
42
56
70
5.0
-65 to +150
-65 to +125
30
50
35.0
15.0
0.5
0.55
0.85
0.70
350
100
SB
520-G
54S0B-G
54
S
5
B
-G
SB
550-G
SB
560-G
SB
5100-G
SB
580-G
Comchip
S
M
D
D
i
o
d
e
S
p
e
c
i
a
l
i
s
t
135
IR
1. Pulse test 300μs pulse width, 1% duty cycle.
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