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参数资料
| 型号： | SB5H90HE3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 5 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 65K |
| 代理商： | SB5H90HE3/54 |
Document Number: 88722
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 04-Aug-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
SB5H90, SB5H100
Vishay General Semiconductor
FEATURES
Guardring for overvoltage protection
Low power losses and high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
90 V, 100 V
IFSM
200 A
VF
0.70 V
IR
200 μA
TJ max.
175 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB5H90
SB5H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 80 °C
IF(AV)
5.0
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
IRRM
1.0
A
Storage temperature range
TSTG
- 55 to + 175
°C
Maximum operating junction temperature
TJ
175
°C
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