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参数资料
| 型号： | SBF535 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC, ITO-220AC, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 72K |
| 代理商： | SBF535 |
RATING AND CHARACTERISTIC CURVES
SBF530 thru SBF545
FIG.1 - FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
A
M
P
E
R
E
S
0
50
75
100
125
1
0
25
4
150
CASE TEMPERATURE , C
3
0
2
RESISTIVE OR
INDUCTIVE LOAD
5
PERCENT OF RATED PEAK REVERSE VOLTAGE (VOLTS)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,(
m
A
)
20
40
120
140
0
0.001
0.1
1.0
100.0
10.0
60
80
100
TJ = 100 C
0.01
TJ = 25 C
TJ = 75 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
0.2
0.3
0.7
0.8
1.0
10
100
0.4
0.5
0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
0.1
1.0
10
100
0.1
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
REVERSE VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
10
1
100
1000
100
10
0.1
4
TJ = 25 C, f= 1MHz
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
A
M
P
E
R
E
S
1
5
10
50
100
2
20
0
25
50
75
100
125
150
8.3ms Single Half-Sine-Wave
相关PDF资料 |
PDF描述 |
|---|---|
| SB560-E3/73 | 5 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SDR952ZDS | 50 A, 200 V, SILICON, RECTIFIER DIODE, TO-254AA |
| SSA24-E3/61T | 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SBLB25L20CT-E3/45 | 12.5 A, 20 V, SILICON, RECTIFIER DIODE, TO-263AB |
| SM5S13HE3/2D | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBF-5B-100-G | 制造商:ROBNSN 功能描述: |
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| SBFP405D | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:SBFP405D |
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| SBFP420D | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:UHF to C Band Low Noise Amplifier, Oscillation Applications |
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