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参数资料
| 型号： | SBG11100 |
| 厂商： | DIODES INC |
| 元件分类： | 整流器 |
| 英文描述： | RECTIFIER DIODE |
| 封装： | PLASTIC, D2PAK-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 65K |
| 代理商： | SBG11100 |
D
S30115 Rev. 1P-4
1 of 2
SBG11100
SBG11100
11A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Case: D2PAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 1.7 grams (approx.)
Mechanical Data
B
C
D
E
G
H
J
K
L
M
A
123
4
PIN 1
PIN 3
PIN 4
D2PAK
Dim
Min
Max
A
9.65
10.69
B
14.60
15.88
C
0.51
1.14
D
2.29
2.79
E
4.37
4.83
G
1.14
1.40
H
1.14
1.40
J
8.25
9.25
K
0.30
0.64
L
2.03
2.92
M
2.29
2.79
All Dimensions in mm
Characteristic
Symbol
SBG11100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
RMS Reverse Voltage
VR(RMS)
71
V
Average Rectified Output Current
@ TC = 162
°C
IO
11
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
250
A
Forward Voltage
@ IF = 8A, Tj = 25
°C
@ IF = 16A, Tj = 25
°C
@ IF = 8A, Tj = 125
°C
@ IF = 16A, Tj = 125
°C
VFM
0.72
0.88
0.58
0.69
V
Voltage Rate of Change (Note 2)
dv/dt
10,000
V/
ms
Peak Reverse Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 125
°C
IRM
0.55
7
mA
Junction Capacitance (Note 3)
CJ
500
pF
Typical Thermal Resistance Junction to Case (Note 1)
RqJC
2.0
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +175
°C
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Very Low
Forward Voltage Drop
Surge Overload Rating to 250A Peak
Plastic Material: UL Flammability
Classification Rating 94V-0
Note:
Pins 1 & 3 should be electrically
connected the printed circuit board.
Notes:
1. Thermal resistance: junction to case, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
2. 300
ms pulse width, 2% duty cycle.
3. F = 1 MHz, VR = 5V.
ADVANCE
INFORMATION
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