参数资料
型号: SBH3040
厂商: SEMIKRON INTERNATIONAL
元件分类: 整流器
英文描述: 30 A, 40 V, SILICON, RECTIFIER DIODE
封装: PLASTIC PACKAGE-2
文件页数: 1/3页
文件大小: 120K
代理商: SBH3040
SBH 3020 ... SBH 3060
by SEMIKRON
Rev. 2 – 06.05.2011
1
Axial Lead Diode
Diode
High temperature schottky
barrier diodes
Forward Current: 30 A
Reverse Voltage: 20 to 60 V
SBH 3020 ... SBH 3060
Preliminary Data
Features
Max. solder temperature: 260°C
Plastic material has UL
classification 94V-0
Typical Applications*
Designed as Bypass Diodes for Solar
Panels
Protection application
Mechanical Data
Plastic case: 8 x 7,5 [mm]
Weight approx.: 2,4 g
Terminals: plated terminals solderable
per MIL-STD-750
Mounting position: any
Standard packaging: 500 pieces per
ammo or 1000 pieces per reel
Footnotes
1) IF = - A, IR = - A, IRR = - A
2)
IF = 5 A, Tj = 25 °C
3) IF = 30 A, Tj = 25 °C
4) Valid, if leads are kept at TA at a distance
of 0 mm from case
5) Max. junction temperature Tj ≤175 °C in
reverse mode (VR = 80% VRRM) in reverse
mode, Tj≤ 200 °C in bypass mode
6) Thermal resistance from junction to lead/
terminal at distance 0 mm from case
Type
Repetitive
peak
reverse
voltage
VRRM
V
Surge peak
reverse
voltage
VRSM
V
Max.
reverse
recovery
time
trr1)
ns
Max.
forward
voltage
VF2)
V
Max.
forward
voltage
VF3)
V
SBH 3020
20
-
0,43
0,6
SBH 3030
30
-
0,43
0,6
SBH 3040
40
-
0,43
0,6
SBH 3045
45
-
0,43
0,6
SBH 3050
50
-
0,53
0,7
SBH 3060
60
-
0,53
0,7
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Ta = 25 °C, unless otherwise specified
IFAV
R-load, 4), Ta =50 °C
30
A
IFRM
f > 15 Hz, 4)
90
A
IFSM
half sinus-wave
Ta =25 °C
tp =10ms
700
A
tp =8.3 ms
A
i2t
Ta =25 °C
tp =10ms
2450
As
tp =8.3 ms
As
Tj
Operating junction temperature
-50 ... +175
°C
Tj
DC forward (bypass) mode 5)
-50 ... +200
°C
Tstg
Storage temperature
-50 ... +175
°C
Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Ta = 25 °C, unless otherwise specified
IR
Tj =25 °C, VR = VRRM
150
A
IR
Tj =100 °C, VR = VRRM
mA
Cj
at 1 MHz and applied reverse voltage
of 4 V
-pF
ERSM
L= 60 mH, Tj = 25 °C, inductive load
switched off
-mJ
Rth(j-a)
4)
-K/W
Rth(j-L)
6)
2.5
K/W
相关PDF资料
PDF描述
SBJ2630 18 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC
SBL1025L 10 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AC
SBL1030L 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC
SBL1045CT 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
SBL1050 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC
相关代理商/技术参数
参数描述
SBH3040TL 制造商:SEMIKRON 制造商全称:Semikron International 功能描述:High temperature schottky barrier diodes
SBH3045 制造商:SEMIKRON 制造商全称:Semikron International 功能描述:High temperature schottky barrier diodes
SBH3045TL 制造商:SEMIKRON 制造商全称:Semikron International 功能描述:High temperature schottky barrier diodes
SBH3050 制造商:SEMIKRON 制造商全称:Semikron International 功能描述:High temperature schottky barrier diodes
SBH3060 制造商:SEMIKRON 制造商全称:Semikron International 功能描述:High temperature schottky barrier diodes