参数资料
型号: SBL2030CT-HE3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 1/5页
文件大小: 142K
代理商: SBL2030CT-HE3/45
SBL(F,B)2030CT & SBL(F,B)2040CT
Vishay General Semiconductor
Document Number: 88730
Revision: 25-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
30 V, 40 V
IFSM
250 A
VF
0.60 V
TJ max.
150 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL20xxCT
ITO-220AB
SBLF20xxCT
SBLB20xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL2030CT
SBL2040CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Working peak reverse voltage
VRWM
21
28
V
Maximum DC blocking voltage
VDC
30
40
V
Maximum average forward rectified current at TC = 105 °C
total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
A
Peak repetitive reverse surge current per diode at tp = 2.0 s, 1 kHz
IRRM
1.0
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
VAC
1500
V
相关PDF资料
PDF描述
SBLB2040CT-HE3/45 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-263AB
SBLB2030CTHE3/45 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-263AB
SBL2080CT 20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB
SBL2050CTP 20 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
SBL2040CTP 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
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